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| ECO-PACTM 2 IGBT Module Preliminary Data Sheet PSHI 50D/12* IC25 = 49 A VCES = 1200 V VCE(sat)typ. = 3.1 V Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C N9 NTC P18 PSHI 50D/12* *NTC optional Features 1200 20 49 33 50 VCES 10 208 V V A A A s W Maximum Ratings VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions * * * * * * * * * * * * * * * * * * * Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 3.7 6.5 V V V VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Isolation voltage 3000 V UL registered, E 148688 Advantages space and weight savings reduced protection circuits package designed for wave soldering High power density Easy to mount with two screws 1.1 mA 4.2 mA 180 100 70 500 70 4.6 3.4 1.65 1.2 nA ns ns ns ns mJ mJ nF 0.6 K/W K/W VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 Typical Applications motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50D/12 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 31 A A Package style and outline Dimensions in mm (1mm = 0.0394") Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns 1.3 K/W K/W IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 455 470 3474 485 k K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50D/12 80 A IC VGE = 17 V 15 V 13 V 11V 80 A IC 60 VGE = 17V 15V 13V 11V 60 40 TVJ = 25C 40 20 9V 20 9V TVJ = 125C 0 42T120 0 1 2 3 4 VCE 5 6V7 0 42T120 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics 80 A IC 50 40 A 30 Fig. 2 Typ. output characteristics 60 VCE = 20V IF 40 20 TVJ = 125C TVJ = 25C 20 TVJ = 125C TVJ = 25C 42T120 10 0 42T120 0 4 6 8 10 12 VGE 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 trr 20 V 200 160 ns 120 TVJ = 125C VR = 600 V IF = 15 A IRM 15 VGE 40 A IRM trr 30 10 VCE = 600V IC = 25A 20 10 42T120 80 40 5 0 0 42T120 0 40 80 120 QG nC 160 0 200 400 600 -di/dt A/s 800 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50D/12 15 mJ Eon VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C 150 ns 100 t Eoff 12 mJ td(off) Eoff 600 ns 400 t 10 8 VCE = 600V VGE = 15V RG = 47 TVJ = 125C td(on) tr 5 50 4 200 Eon 0 42T120 0 20 40 IC A 60 0 0 tf 0 20 40 IC A 42T120 0 60 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 8 mJ t Eoff td(off) 800 ns 600 t 4 mJ Eon td(on) 160 ns 120 3 Eon tr VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 42T120 6 Eoff 2 80 4 VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 400 1 40 2 200 tf 0 0 20 40 60 RG 80 100 0 0 42T120 0 20 40 60 RG 80 100 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W diode 60 A ICM 40 RG = 47 TVJ = 125C ZthJC 1 IGBT 0,1 0,01 0,001 single pulse 20 0 42T120 0 200 400 600 800 1000 1200 1400 V VCE 0,0001 0,00001 0,0001 0,001 MDI...50-12P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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